QI Zhenzhong
,
YAO Weiguo
,
WANG Yuqi
,
LIU Ling
,
JIA Junhui Institute of Solid State Physics
,
Academia Sinica
,
Hefei
,
China.
材料科学技术（英）
Introducing N_2 during sputtering and pre-oxidation of substrate were investigated to improve the adhesion of sputtered TiC coating to steel substrate. The results show that yeactive gas N_2 increases the adhesion of TiC coating to steel because of a graded interface existing between coating and substrate. The interaction of discharge plasma with the surface of substrate was discussed. Pre-oxidation of substrate is effective for improving the adhesion due to the fomation of FeTi0_3 which appeared as an inteylayer between coating and pre-oxidized substrate.
关键词:
Sputtering
,
null
,
null
,
null
,
null
Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
